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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet November 1999 File Number 4697.3
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337.
Features
* >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A * 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC * Low Conduction Loss * Temperature Compensating SABERTM Model www.intersil.com * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
E C
Ordering Information
PART NUMBER HGTG12N60A4D HGTP12N60A4D HGT1S12N60A4DS PACKAGE TO-247 TO-220AB TO-263AB BRAND 12N60A4D 12N60A4D 12N60A4D
G
COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60A4DS9A.
JEDEC TO-263AB
Symbol
C
COLLECTOR (FLANGE) G E
JEDEC STYLE TO-247
G E C G E
COLLECTOR (FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
2-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. SABERTM is a trademark of Analogy, Inc. 1-888-INTERSIL or 407-727-9207 | Copyright (c) Intersil Corporation 1999
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS 600 54 23 96 20 30 60A at 600V 167 1.33 -55 to 150 300 260
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
UNITS V A A A V V W W/oC oC
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA VGEP Qg(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Figure 24) TEST CONDITIONS IC = 250A, VGE = 0V VCE = 600V IC = 12A, VGE = 15V TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 60 TYP 2.0 1.6 5.6 8 78 97 17 8 96 18 55 160 50 17 16 110 70 55 250 175 MAX 250 2.0 2.7 2.0 250 96 120 170 95 350 285 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J J ns ns ns ns J J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
IC = 250A, VCE = 600V VGE = 20V TJ = 150oC, RG = 10, VGE = 15V, L = 100H, VCE = 600V IC = 12A, VCE = 300V IC = 12A, VCE = 300V VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note3) Turn-On Energy (Note 3) Turn-Off Energy (Note 2)
IGBT and Diode at TJ = 25oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Figure 24)
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications
PARAMETER Diode Forward Voltage Diode Reverse Recovery Time TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL VEC trr RJC TEST CONDITIONS IEC = 12A IEC = 12A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance Junction To Case IGBT Diode NOTES: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. MIN TYP 2.2 30 18 MAX 0.75 2.0 UNITS V ns ns
oC/W oC/W
Typical Performance Curves
60 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE , COLLECTOR TO EMITTER CURRENT (A)
70 60 50 40 30 20 10 0 0
VGE = 15V, 50 40 30 20 10 0
TJ = 150oC, RG = 10, VGE = 15V, L = 200H
25
50
75
100
125
150
100
200
300
400
500
600
700
TC , CASE TEMPERATURE (oC)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
20 18 16 14 12 10 8 6 4 2 0 9
fMAX , OPERATING FREQUENCY (kHz)
300
TC 75oC
VGE 15V
VCE = 390V, RG = 10, TJ = 125oC
300 275 250 ISC 225 200 175 150 tSC 125 100 75
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.75oC/W, SEE NOTES TJ = 125oC, RG = 10, L = 500H, V CE = 390V
10
1
3
10
20
30
10
11
12
13
14
15
50
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
2-3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
500
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A)
Unless Otherwise Specified (Continued)
ICE , COLLECTOR TO EMITTER CURRENT (A)
24
DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s
24 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 20 16 12 8 4 0 TJ = 25oC
20 16 TJ = 150oC 12 TJ = 125oC 8 4 0
TJ = 150oC TJ = 125oC
TJ = 25oC 0 0.5 1.0 1.5 2 2.5
0
0.5
1.0
1.5
2
2.5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700 EON2 , TURN-ON ENERGY LOSS (J) EOFF, TURN-OFF ENERGY LOSS (J) RG = 10, L = 500H, VCE = 390V 600 500 400 300 200 100 0 TJ = 25oC, VGE = 12V, VGE = 15V TJ = 125oC, VGE = 12V, VGE = 15V
400 RG = 10, L = 500H, VCE = 390V 350 300 250 200 150 100 50 0 2 4 6 8 10 12 TJ = 25oC, VGE = 12V OR 15V 14 16 18 20 22 24 TJ = 125oC, VGE = 12V OR 15V
2
4
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
18 td(ON)I, TURN-ON DELAY TIME (ns) RG = 10, L = 500H, VCE = 390V 17 trI , RISE TIME (ns) 16 15 14 13 12 11 10 2 4 6 8 10 12 14 16 18 20 22 24 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 125oC, VGE = 15V TJ = 25oC, TJ = 125oC, VGE = 12V
32 28 24 20 16 12 8 4 0 2
RG = 10, L = 500H, VCE = 390V
TJ = 125oC OR TJ = 25oC, VGE = 12V
TJ = 25oC OR TJ = 125oC, VGE = 15V
4
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
2-4
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Typical Performance Curves
115 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 10, L = 500H, VCE = 390V 110 105 100 95 VGE = 12V, VGE = 15V, TJ = 25oC 90 85 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 125oC 80 70 60 50 40 30 20 10 2 4 6 8 10 12 14 16 18 20 22 24 ICE , COLLECTOR TO EMITTER CURRENT (A) 2 4 6 8 10 12 14 16 18 20 22 24 TJ = 25oC, VGE = 12V OR 15V TJ = 125oC, VGE = 12V OR 15V
Unless Otherwise Specified (Continued)
90
RG = 10, L = 500H, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE , COLLECTOR TO EMITTER CURRENT (A)
250
VGE , GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s TJ = 25oC TJ = -55oC TJ = 125oC
16 14 12 10 8 6 4 2 0 0
IG(REF) = 1mA, RL = 25, TC = 25oC
200
VCE = 600V
150
VCE = 400V
100
VCE = 200V
50
0
6
7
8
9
10
11
12
13
14
15
16
10
20
30
40
50
60
70
80
VGE , GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
1.2 1.0 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 0.8
RG = 10, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
10
ICE = 24A 0.6 0.4 ICE = 12A 0.2 ICE = 6A 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
TJ = 125oC, L = 500H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
ICE = 24A 1 ICE = 12A ICE = 6A
0.1 5 10 100 RG , GATE RESISTANCE () 1000
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
2-5
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Typical Performance Curves
3.0 FREQUENCY = 1MHz C, CAPACITANCE (nF) 2.5 2.0 CIES 1.5 1.0 COES 0.5 CRES 0 0 5 10 15 20 25
Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s, TJ = 25oC 2.3
2.2 ICE = 18A 2.1 ICE = 12A
2.0 ICE = 6A 1.9
8
9
10
11
12
13
14
15
16
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE
14 IEC , FORWARD CURRENT (A) 12 10 8 6 4 2 0 DUTY CYCLE < 0.5%, PULSE DURATION = 250s trr, RECOVERY TIMES (ns) 125oC 25oC
90 80 70 60 50 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 8 125oC ta 25oC trr 25oC ta 25oC tb 9 10 11 12 dIEC/dt = 200A/s 125oC trr 125oC tb
VEC , FORWARD VOLTAGE (V)
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Qrr , REVERSE RECOVERY CHARGE (nc)
65 60 trr , RECOVERY TIMES (ns) 55 50 45 40 35 30 25 20 15 10 5 200 300 400 500 600 700 800 25oC ta 25oC tb 900 1000 125oC ta 125oC tb IEC = 12A, VCE = 390V
400 350 300 250 200 150 100 50 0 200
VCE = 390V
125oC IEC = 12A
125oC IEC = 6A
25oC IEC = 12A
25oC IEC = 6A 300 400 500 600 700 800 900 1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
diEC/dt, RATE OF CHANGE OF CURRENT (A/s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT
2-6
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.50 0.20 10-1 0.10 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 100 101 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTP12N60A4D DIODE TA49371 90% VGE L = 500H VCE RG = 10 DUT + ICE VDD = 390V 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
-
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
2-7
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
2-8
ECCOSORBDTM is a trademark of Emerson and Cumming, Inc.

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